![]() ![]() Many of success on large-scale MoS 2 monolayer sheets have been reported. Chemical vapor deposition (CVD) has thus become one of mainstream fabrication techniques to achieve large-scale MoS 2 2D sheets. 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 Since 2D MoS 2 obtained by mechanical exfoliation limits the length scale only to a few micrometers, researchers have studied on how to fabricate such 2D MoS 2 in a large scale, 15, 16, 17, 18, 19, 20 which would open the gate toward more practical applications enabling conventional photolithographic device/circuit patterning. 1, 2, 3, 4 Like graphene, those 2D semiconductors are easily formed by mechanical exfoliation using scotch tapes in general, while it also displays high ON/OFF current ratio and good subthreshold swing in a field-effect transistor (FET) form with n-type conduction unlike graphene, which shows no bandgap. Molybdenum disulfide (MoS 2), a two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor has attracted much attention from many researchers owing to its interesting physical properties and potentials for future nanoscale electronics. Dynamic switching of blue and green OLED pixels is shown at ~5 V, demonstrating their application potential. Our MoS 2 FETs show a high linear mobility of approximately 10 cm 2 V −1 s −1, due to a large grain size around 60 μm, and a high ON/OFF current ratio of 10 8. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al 2O 3 dielectric, so that the uniformity of threshold voltage ( V th) of the FETs might be improved. Here we fabricate CVD-grown large-area MoS 2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. However, reports of conventional photolithographic patterning of large-area 2D MoS 2-based devices with high mobilities and low switching voltages are rare. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS 2. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Two-dimensional molybdenum disulfide (MoS 2) has substantial potential as a semiconducting material for devices.
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